photo ic photo ic for laser beam synchronous detection low voltage operation (3.3 v) s10317 series s10317 series photo ic uses a high-speed pin photodiode designed for laser beam synchronous detection. s10317 series is driven by a low voltage (3.3 v) compatible with low voltage peripheral components that will be mounted on the same pc board. two types of c urrent amplifiers are available with a gain of 6 times (S10317-01) and 20 times (s10317) that can be selected according to laser power to be used. tape-and-reel shipment is also available (s10317-30 and s10317-31). preliminary data apr. 2007 features l low voltage operation (3.3 v) l high sensitivity current amplifier gain: 20 times (s10317) 6 times (S10317-01) l digital output l small package l suitable for lead-free solder reflow l active area: 2.84 0.5 mm applications l print start timing detection for laser printers, digital copiers, fax machines, etc. 1 absolute maximum ratings (ta=25 c, unless otherwise noted) parameter symbol value unit supply voltage vcc -0.5 to +7 v power dissipation * 1 p 300 mw output voltage * 2 vo -0.5 to +7 v output current io 5 ma ro terminal current i ro 3ma operating temperature topr -25 to +80 c storage temperature tstg -40 to +85 c *1: power dissipation decreases at a rate of 4 mw/c above ta=25 c. *2: vcc=+0.5 v or less electrical and optical characteristics (ta=25 c, =780 nm, vcc=3.3 v, ro=5.1 k ? , unless otherwise noted) parameter symbol condition min. typ. max. unit current consumption icc no input - 0.7 1.5 ma high level output voltage v oh i oh =4 ma 2.9 - - v low level output voltage v ol i ol =4 ma * 3 --0.3v s10317 14 19 24 threshold input power S10317-01 p th 49.5 62 74.5 w s10317 - 130 250 h l propagation delay time S10317-01 t phl - 100 200 s10317 - 200 300 l h propagation delay time S10317-01 t plh - 150 250 ns rise time tr - 4 7 ns fall time tf p i =57 w (s10317) p i =186 w (S10317-01) duty ratio 1:1 c l =15 pf * 4 - 4 7 ns maximum input power p i max. - - p th 8 w *3: input power [p i ]=57 w (s10317), p i =186 w (S10317-01) 50 % input light intensity output 100 % 0 % 90 % 1.5 v 10 % t phl tf tr t plh kpicc0112ea
photo ic for laser beam synchronous detection s10317 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. cat. no. kpic1067e02 aug. 2007 dn 2 0.66 3.2 0.2 (including burr) 3.0 * 1.0 0.4 1.0 0.4 0.05 2.4 mirror area range 0.15 2.8 2.9 3.0 * 0.45 0.3 3.0 * 3.4 mirror area range 3.8 3.9 4.0 * 4.0 * 4.2 0.2 5.0 0.3 0.45 0.3 0.35 0.75 1.3 0.8 0.8 0.8 0.1 0.1 0.8 (9 ) 0.3 (9 ) 0.4 0.5 photosensitive surface tolerance unless otherwise noted: 0.1, 2? shaded area indicates burr. chip position accuracy with respect to the package dimensions marked * x, y 0.2, 2? vcc nc out gnd ro gnd gnd gnd gnd photosensitive surface 2.84 0.15 center of active area dimensional outline (unit: mm) kpicc0127ea block diagram vcc 0.1 f 3.3 v current amplifier external gain resistance ro vo ro pd vref gnd function s10317 series photo ic integrates a photodiode chip and an ic chip into the same package. the photodiode chip is internally connected to the ic chip as shown in the block diagram. s10317 series should be used with terminal ro connected to an external gain resistance ro. a photocurrent is generated when a laser beam enters the photodiode. this photocurrent is fed to the input terminal of the ic a nd, after being amplified by the current amplifier, flows to the external gain resistance. at this time, voltages v ro at terminal ro is given by the following expression. v ro =a s p i ro [v] (1) a: current amplifier gain (s10317: 20 times, S10317-01: 6 times) s: photodiode sensitivity [a/w] (approx. 0.44 a/w at 780 nm) p i : input power [w] ro: external gain resistance [ ]; usable range 2 k to 10 k v ro is input to the internal comparator and compared with the internal reference voltage vref (approx. 0.8 v) so the output vo is ?high? when v ro < vref or ?low? when v ro > vref. in equatin (1), set the ro value so that v ro is 2 to 3 v. (monitoring v ro shows that it is limited to about 2 v (with respect to gnd) by the voltage limiting circuit. keep this in mind when monitoring.) kpica0070eb
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